MicroWave Technology Inc.
Located in California’s Silicon Valley, MicroWave Technology, Inc. (MwT) was founded in 1982 by technical principals with broad experience in Gallium Arsenide (GaAs) device design and fabrication. With a factory occupying 35,000 square foot, the Company’s principal assets include both its GaAs semiconductor fab and a hybrid chip and wire microwave integrated circuit (HMIC) manufacturing facility. The vertical manufacturing and product strength provide MwT uncommon ﬂexibility and opportunity in the microwave component marketplace.
Today MwT is a leading U.S. based merchant manufacturer of discrete Gallium Arsenide diodes and transistors (FETs, PHEMTs, and Gunn Diodes). Early work focusing on device reliability resulted in proprietary metallization systems which make MwT’s devices impervious to hydrogen contamination, now an item of great concern to the high-reliability industry. These devices employ proprietary epi material and quarter micron recessed gate process technology, which result in highly linear (+48dBm IP3 in a 1W P-1dB Wireless Amp) and low phase noise (-125dBc @ 100 KHz Offset in a 17.5GHz DRO) de-vices with power outputs ranging from 10 milliwatts to 5 watts. These devices, sold as chips or in packages, ﬁnd wide use in the ampliﬁcation of signals from 10 MHz to 40 GHz in the transmission or reception of information in wireless infrastructure systems, industrial RF applications, and in various defense and space electronics.
By taking advantage of the low intermodulation distortion characteristics of MwT’s GaAs FETs, the Company has enjoyed a growing reputation for its product line of small internally matched modular surface mount transmit and receive ampliﬁer modules aimed at multi-carrier and/or digitally modulated (high linearity) wireless infrastructure and military communication systems. Principal applications are as receiver front ends and as driver or picocell output ampliﬁers in cellular, PCS and WLL base station and military high reliability communication. Noteworthy new products have extremely low input and output return loss providing ease of gain insertion in highly critical high linearity power ampliﬁer cascades. MwT offers its high-reliability proven thin ﬁlm circuit processing capability to both internal and external customer’s usage. Employing thin ﬁlm hybrid microcircuit construction, MwT produces and markets various standard modular ampliﬁer products to 26 GHz. These modules are also building elements for MwT to de-sign and manufacture standard as well as custom connectorized ampliﬁers for defense and telecommunication applications.
MwT has many years of experience of doing customer specials and has a vast library of custom designs based on MwT devices. MwT uses both its standard and custom versions of its parts to produce specialized ampliﬁers and board level products. Our proven experience and track record can help you save design cost, time, and engineering resource. Examples include low frequency LNA, Wireless LNA booster ampliﬁer, Integrated building blocks, high frequency oscillators, evaluation boards and test ﬁxtures.
MicroWave Technology Inc. is pleased to launch a new series of MPM pre-amplifiers with very small footprint and lower power consumption
The new MPM series is specifically developed for the multiple-channel coil applications for 1.0T, 1.5T and and 3.0T MRI systems. The footprint of the MPM series pre-amplifiers are only 0.74 inch x 0.60 inch (comparable to the size of a penny) and the height is 0.29 inch, making it ideally suitable for MRI coil applications having high numbers of channels (e.g. 8, 16, 32, 64 channels and beyond). The typical DC current of 15 mA is about half of that of conventional pre-amplifiers, resulting in low overall heat dissipation for the multiple-channel coil applications.
The MPM pre-amp series has frequency range between 43 MHz and 127 MHz and utilizes special low noise GaAs devices fabricated in MwT's captive GaAs fab to achieve the excellent noise figure of 0.4dB at the standard 1.0T, 1.5, and 3.0T MRI frequencies. . The typical electrical performance is summarized below. Please see the attached datasheet for detailed information.
- Input impedance: 2 Ohm typical
- Input phase: 180 ± 5º
- Max input protected power: 30dBm
- Gain: 25-30 dB
- DC voltage: 10 ± 0.5V
- Output return loss: -15dB
- NF: 0.4dB (0.5dB Max.)
- IP3: 20dBm
- DC current: 15 mA typical
MicroWave Technology Inc. (MwT), An IXYS Company, Launched a Family of High Linearity Power Amplifiers and Drivers for WiFi and WiMax Applications
MicroWave Technology Inc. (MwT), An IXYS Company (NASDAQ tick symbol: SYXI), released a family of eight high linearity power amplifiers (PAs) for WiFi (802.11) and WiMax (802.16d/e) standards for all three frequency bands, 2.4 – 2.7 GHz, 3.3- 3.7 GHz, and 4.9 – 5.9GHz. The power amplifiers of the “WPS” series have P-1dB up to 36 dBm with IP3 as high as 50 dBm and EVM (Error Victor Magnitude) less than 2% at 29dBm output power level under 64QAM modulation schedule with 256 WiMax carriers. The typical gain across the bands is 14 dB. The power amplifiers have over 100 years of Mean-Time-Toward-Failure (MTTF) at 150C junction temperature and are available in both Pd-free surface mount leadless 02 packages and flange packages.
MwT also offers MPS series products as high linearity drivers suitable for driving the WPS power amplifier series for the same WiFi and WiMax frequency bands. Those drivers have P-1dB of 29dBm with IP3 of 45 dBm and EVM (Error Victor Magnitude) less than 2.5% at 22dBm output power level under WiMax modulation scheme. The typical gain across the bands is 13 dB. In additional, MwT recently released seven FET products in the SOT89 and QFN packages, MwT-1789HL, MwT-1789NL, MwT-1789SB, MwT-17Q3, MwT-22Q4, MwT-A989, and MwT-A989SB for generic linear power and low noise applications. Those packaged FET’s deliver superior high dynamic range performance from 0.9 to 4.0 GHz. The MwT-1789SB and MwT-A989SB are internally self-biased. To see all low cost packages click here.
“Utilizing our proprietary semiconductor device technologies, these new WiMax and WiFi PAs represent MwT power amplifier products with the best in class linearity performance,” said Dr. Greg Zhou, GM of MwT, “We continue to leverage our high linearity device technology and design capability to address the 802.11 WiFi and the emerging 802.16d/e WiMax base station applications. We have expanded our linear power amplifier products to offer our customers the best solutions for all three frequency bands with higher output power levels in compliance to the EVM specifications”.
As a part of its growth strategy, IXYS is committed to develop and expand high performance power amplifier products and solutions in the wireless telecommunication space.